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Crystals 2017, 7(3), 81;

The Influence of Conductive Nanodomain Walls on the Photovoltaic Effect of BiFeO3 Thin Films

State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433, China
Author to whom correspondence should be addressed.
Academic Editor: Iwan Kityk
Received: 30 January 2017 / Revised: 26 February 2017 / Accepted: 6 March 2017 / Published: 21 March 2017
(This article belongs to the Special Issue Multiferroics Crystals)
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Two Planar Pt electrodes with an inter-electrode distance of about 100 nm were fabricated at the surface of BiFeO3 thin films, which allow the manipulation of ferroelectric domain switching at nanoscale. This electrode configuration was pursued to study conductive domain-wall influence on the photovoltaic current in BiFeO3 thin films. Modulations of short-circuit photovoltaic current and hysteretic conductive switching behaviors were found in the above nanodevices, accompanied by the generation of the conductive domain walls connecting two gapped electrodes. Our technique provides a new method to configure ferroelectric domains, where the influence of the conductive domain walls on the photovoltaic effect is preeminent. View Full-Text
Keywords: BiFeO3; photovoltaic effect; nanodevice BiFeO3; photovoltaic effect; nanodevice

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Bai, Z.; Zhang, Y.; Guo, H.; Jiang, A. The Influence of Conductive Nanodomain Walls on the Photovoltaic Effect of BiFeO3 Thin Films. Crystals 2017, 7, 81.

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