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A Study on Graphene—Metal Contact

Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-8656, Japan
Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075, Singapore
Department of Electronic and Computer Engineering, South University of Science and Technology, Shenzhen, Guangdong 518055, China
Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
Author to whom correspondence should be addressed.
Crystals 2013, 3(1), 257-274;
Received: 9 January 2013 / Revised: 19 February 2013 / Accepted: 27 February 2013 / Published: 18 March 2013
(This article belongs to the Special Issue Graphenes)
PDF [295 KB, uploaded 18 March 2013]


The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact. View Full-Text
Keywords: graphene; field-effect transistor; contact resistance; Raman graphene; field-effect transistor; contact resistance; Raman

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Liu, W.; Wei, J.; Sun, X.; Yu, H. A Study on Graphene—Metal Contact. Crystals 2013, 3, 257-274.

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