Order Article Reprints

Ni H, Hu Y, Zhou G, Mao C, Chen Z, He Q, Qian L. Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study. Crystals. 2023; 13(2):284. https://doi.org/10.3390/cryst13020284

Ni, Hao, Yonghong Hu, Guopeng Zhou, Caixia Mao, Zhiyuan Chen, Qingyong He, and Libing Qian. 2023. "Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study" Crystals 13, no. 2: 284. https://doi.org/10.3390/cryst13020284

Ni, H., Hu, Y., Zhou, G., Mao, C., Chen, Z., He, Q., & Qian, L. (2023). Structures, Electric Properties and STM Images of GeSe Monolayers Doped by Group IV–VI Atoms: A First-Principles Study. Crystals, 13(2), 284. https://doi.org/10.3390/cryst13020284