First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD

Mukhopadhyay, Swarnav; Sanyal, Surjava; Wang, Guangying; Gupta, Chirag; Pasayat, Shubhra S.

doi:10.3390/cryst13101457

Open AccessArticle

First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD

by

Swarnav Mukhopadhyay

^*

,

Surjava Sanyal

,

Guangying Wang

,

Chirag Gupta

and

Shubhra S. Pasayat

Electrical & Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA

^*

Author to whom correspondence should be addressed.

Crystals 2023, 13(10), 1457; https://doi.org/10.3390/cryst13101457

Submission received: 31 August 2023 / Revised: 16 September 2023 / Accepted: 19 September 2023 / Published: 1 October 2023

(This article belongs to the Special Issue III-Nitride Materials: Properties, Growth, and Applications)

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Abstract

In this study, carbon-doped semi-insulating N-polar GaN on a sapphire substrate was prepared using a propane precursor. Controlling the deposition rate of N-polar GaN helped to improve the carbon incorporation efficiency, providing a semi-insulating behavior. The material quality and surface roughness of the N-polar GaN improved with modified deposition conditions. C-doping using 1.8 mmol/min of propane gave an abrupt doping profile near the GaN/sapphire interface, which was useful for obtaining semi-insulating N-polar GaN grown on sapphire. This study shows that further development of the deposition process will allow for improved material quality and produce a state-of-the-art N-polar semi-insulating GaN layer.

Keywords: N-polar GaN; propane doping; semi-insulating N-polar GaN; C-doped N-polar GaN; growth rate optimization

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MDPI and ACS Style

Mukhopadhyay, S.; Sanyal, S.; Wang, G.; Gupta, C.; Pasayat, S.S. First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD. Crystals 2023, 13, 1457. https://doi.org/10.3390/cryst13101457

AMA Style

Mukhopadhyay S, Sanyal S, Wang G, Gupta C, Pasayat SS. First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD. Crystals. 2023; 13(10):1457. https://doi.org/10.3390/cryst13101457

Chicago/Turabian Style

Mukhopadhyay, Swarnav, Surjava Sanyal, Guangying Wang, Chirag Gupta, and Shubhra S. Pasayat. 2023. "First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD" Crystals 13, no. 10: 1457. https://doi.org/10.3390/cryst13101457

APA Style

Mukhopadhyay, S., Sanyal, S., Wang, G., Gupta, C., & Pasayat, S. S. (2023). First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD. Crystals, 13(10), 1457. https://doi.org/10.3390/cryst13101457

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First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD

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