Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Insulator of InGaZnO Thin-Film Transistors
Abstract
:1. Introduction
2. Materials and Methods
3. Results
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Park, S.; Youn, S.; Jang, J.T.; Kim, H.; Kim, D.H. Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Insulator of InGaZnO Thin-Film Transistors. Crystals 2022, 12, 594. https://doi.org/10.3390/cryst12050594
Park S, Youn S, Jang JT, Kim H, Kim DH. Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Insulator of InGaZnO Thin-Film Transistors. Crystals. 2022; 12(5):594. https://doi.org/10.3390/cryst12050594
Chicago/Turabian StylePark, Shinyoung, Sangwook Youn, Jun Tae Jang, Hyungjin Kim, and Dae Hwan Kim. 2022. "Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Insulator of InGaZnO Thin-Film Transistors" Crystals 12, no. 5: 594. https://doi.org/10.3390/cryst12050594
APA StylePark, S., Youn, S., Jang, J. T., Kim, H., & Kim, D. H. (2022). Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Insulator of InGaZnO Thin-Film Transistors. Crystals, 12(5), 594. https://doi.org/10.3390/cryst12050594