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Journal: Crystals, 2022
Volume: 12
Number: 594

Article: Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Insulator of InGaZnO Thin-Film Transistors
Authors: by Shinyoung Park, Sangwook Youn, Jun Tae Jang, Hyungjin Kim and Dae Hwan Kim
Link: https://www.mdpi.com/2073-4352/12/5/594

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