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Journal: Crystals, 2022
Volume: 12
Number: 594
Article:
Effect of Hydrogen Migration in SiO2/Al2O3 Stacked Gate Insulator of InGaZnO Thin-Film Transistors
Authors:
by
Shinyoung Park, Sangwook Youn, Jun Tae Jang, Hyungjin Kim and Dae Hwan Kim
Link:
https://www.mdpi.com/2073-4352/12/5/594
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