Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Hu, Haixiao; Zhang, Baoguo; Liu, Lei; Xu, Deqin; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng

doi:10.3390/cryst10020141

Open AccessArticle

Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

by

Haixiao Hu

¹,

Baoguo Zhang

¹,

Lei Liu

¹,

Deqin Xu

¹,

Yongliang Shao

^1,2,*,

Yongzhong Wu

^1,2,* and

Xiaopeng Hao

^1,2

¹

State Key Lab of Crystal Materials, Shandong University, Jinan 250100, China

²

Department of Materials Science and Engineering, Qilu University of Technology, (Shandong Academy of Science), Jinan 250353, China

^*

Authors to whom correspondence should be addressed.

Crystals 2020, 10(2), 141; https://doi.org/10.3390/cryst10020141

Submission received: 11 February 2020 / Revised: 18 February 2020 / Accepted: 21 February 2020 / Published: 24 February 2020

(This article belongs to the Special Issue Semiconductor Heteroepitaxy)

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Abstract

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatments of substrate have been used to promote crystal quality, there is still plenty of room for its improvement, in terms of direct and continuous growth based on the hydride vapor phase epitaxy (HVPE) technique. Here, we report a three-step process that can be used to enhance the quality of GaN crystal by tuning V/III rate during successive HVPE process. In the growth, a metal-organic chemical vapor deposition (MOCVD) grown GaN on sapphire (MOCVD-GaN/Al₂O₃) was employed as substrate, and a high-quality GaN polyporous interlayer, with successful acquisition, without any additional substrate treatment, caused the growth stress to decrease to 0.06 GPa. Meanwhile the quality of GaN improved, and the freestanding GaN was directly obtained during the growth process.

Keywords: hydride vapor phase epitaxy; freestanding; gallium nitride; polyporous interlayer

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MDPI and ACS Style

Hu, H.; Zhang, B.; Liu, L.; Xu, D.; Shao, Y.; Wu, Y.; Hao, X. Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process. Crystals 2020, 10, 141. https://doi.org/10.3390/cryst10020141

AMA Style

Hu H, Zhang B, Liu L, Xu D, Shao Y, Wu Y, Hao X. Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process. Crystals. 2020; 10(2):141. https://doi.org/10.3390/cryst10020141

Chicago/Turabian Style

Hu, Haixiao, Baoguo Zhang, Lei Liu, Deqin Xu, Yongliang Shao, Yongzhong Wu, and Xiaopeng Hao. 2020. "Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process" Crystals 10, no. 2: 141. https://doi.org/10.3390/cryst10020141

APA Style

Hu, H., Zhang, B., Liu, L., Xu, D., Shao, Y., Wu, Y., & Hao, X. (2020). Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process. Crystals, 10(2), 141. https://doi.org/10.3390/cryst10020141

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Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

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