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Journal: Crystals, 2020
Volume: 10
Number: 1143
Article:
The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
Authors:
by
Maximilian W. Feil, Andreas Huerner, Katja Puschkarsky, Christian Schleich, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger and Tibor Grasser
Link:
https://www.mdpi.com/2073-4352/10/12/1143
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