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Journal: Crystals, 2020
Volume: 10
Number: 1143
1143
Article: The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters
Authors: by Maximilian W. Feil, Andreas Huerner, Katja Puschkarsky, Christian Schleich, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger and Tibor Grasser
Link: https://www.mdpi.com/2073-4352/10/12/1143

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