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Micromachines
Volume 12
Issue 7
10.3390/mi12070750
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Article

Geometrical Effects on Ultrasonic Al Bump Direct Bonding for Microsystem Integration: Simulation and Experiments

by
Jun-Hao Lee
1,
Pin-Kuan Li
1,
Hai-Wen Hung
1,
Wallace Chuang
2,
Eckart Schellkes
2,
Kiyokazu Yasuda
3 and
Jenn-Ming Song
1,3,4,5,*
1
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan
2
Automotive Electronics Department, Robert Bosch Taiwan Co., Ltd., Taipei 104, Taiwan
3
Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
4
Research Center for Sustainable Energy and Nanotechnology, National Chung Hsing University, Taichung 402, Taiwan
5
Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung 402, Taiwan
*
Author to whom correspondence should be addressed.
Micromachines 2021, 12(7), 750; https://doi.org/10.3390/mi12070750
Submission received: 23 May 2021 / Revised: 21 June 2021 / Accepted: 23 June 2021 / Published: 26 June 2021
(This article belongs to the Special Issue MEMS Packaging Technologies and 3D Integration)
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Abstract

This study employed finite element analysis to simulate ultrasonic metal bump direct bonding. The stress distribution on bonding interfaces in metal bump arrays made of Al, Cu, and Ni/Pd/Au was simulated by adjusting geometrical parameters of the bumps, including the shape, size, and height; the bonding was performed with ultrasonic vibration with a frequency of 35 kHz under a force of 200 N, temperature of 200 °C, and duration of 5 s. The simulation results revealed that the maximum stress of square bumps was greater than that of round bumps. The maximum stress of little square bumps was at least 15% greater than those of little round bumps and big round bumps. An experimental demonstration was performed in which bumps were created on Si chips through Al sputtering and lithography processes. Subtractive lithography etching was the only effective process for the bonding of bumps, and Ar plasma treatment magnified the joint strength. The actual joint shear strength was positively proportional to the simulated maximum stress. Specifically, the shear strength reached 44.6 MPa in the case of ultrasonic bonding for the little Al square bumps.
Keywords: finite element analysis; ultrasonic bonding; metal direct bonding; microsystem integration finite element analysis; ultrasonic bonding; metal direct bonding; microsystem integration

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MDPI and ACS Style

Lee, J.-H.; Li, P.-K.; Hung, H.-W.; Chuang, W.; Schellkes, E.; Yasuda, K.; Song, J.-M. Geometrical Effects on Ultrasonic Al Bump Direct Bonding for Microsystem Integration: Simulation and Experiments. Micromachines 2021, 12, 750. https://doi.org/10.3390/mi12070750

AMA Style

Lee J-H, Li P-K, Hung H-W, Chuang W, Schellkes E, Yasuda K, Song J-M. Geometrical Effects on Ultrasonic Al Bump Direct Bonding for Microsystem Integration: Simulation and Experiments. Micromachines. 2021; 12(7):750. https://doi.org/10.3390/mi12070750

Chicago/Turabian Style

Lee, Jun-Hao, Pin-Kuan Li, Hai-Wen Hung, Wallace Chuang, Eckart Schellkes, Kiyokazu Yasuda, and Jenn-Ming Song. 2021. "Geometrical Effects on Ultrasonic Al Bump Direct Bonding for Microsystem Integration: Simulation and Experiments" Micromachines 12, no. 7: 750. https://doi.org/10.3390/mi12070750

APA Style

Lee, J.-H., Li, P.-K., Hung, H.-W., Chuang, W., Schellkes, E., Yasuda, K., & Song, J.-M. (2021). Geometrical Effects on Ultrasonic Al Bump Direct Bonding for Microsystem Integration: Simulation and Experiments. Micromachines, 12(7), 750. https://doi.org/10.3390/mi12070750

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