FR4-Based Electromagnetic Scanning Micromirror Integrated with Angle Sensor
AbstractThis paper presents a flame retardant 4 (FR4)-based electromagnetic scanning micromirror, which aims to overcome the limitations of conventional microelectromechanical systems (MEMS) micromirrors for the large-aperture and low-frequency scanning applications. This micromirror is fabricated through a commercial printed circuit board (PCB) technology at a low cost and with a short process cycle, before an aluminum-coated silicon mirror plate with a large aperture is bonded on the FR4 platform to provide a high surface quality. In particular, an electromagnetic angle sensor is integrated to monitor the motion of the micromirror in real time. A prototype has been assembled and tested. The results show that the micromirror can reach the optical scan angle of 11.2 with a low driving voltage of only 425 mV at resonance (361.8 Hz). At the same time, the signal of the integrated angle sensor also shows good signal-to-noise ratio, linearity and sensitivity. Finally, the reliability of the FR4 based micro-mirror has been tested. The prototype successfully passes both shock and vibration tests. Furthermore, the results of the long-term mechanical cycling test (50 million cycles) suggest that the maximum variations of resonant frequency and scan angle are less than 0.3% and 6%, respectively. Therefore, this simple and robust micromirror has great potential in being useful in a number of optical microsystems, especially when large-aperture or low-frequency is required. View Full-Text
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Lei, H.; Wen, Q.; Yu, F.; Zhou, Y.; Wen, Z. FR4-Based Electromagnetic Scanning Micromirror Integrated with Angle Sensor. Micromachines 2018, 9, 214.
Lei H, Wen Q, Yu F, Zhou Y, Wen Z. FR4-Based Electromagnetic Scanning Micromirror Integrated with Angle Sensor. Micromachines. 2018; 9(5):214.Chicago/Turabian Style
Lei, Hongjie; Wen, Quan; Yu, Fan; Zhou, Ying; Wen, Zhiyu. 2018. "FR4-Based Electromagnetic Scanning Micromirror Integrated with Angle Sensor." Micromachines 9, no. 5: 214.
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