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Open AccessArticle

Millimeter-Wave Substrate Integrated Waveguide Using Micromachined Tungsten-Coated Through Glass Silicon Via Structures

School of Electrical and Electronics Engineering, Chung-Ang University, 84 Heukseok-ro, Dongjak-gu, Seoul 06974, Korea
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Micromachines 2018, 9(4), 172; https://doi.org/10.3390/mi9040172
Received: 27 February 2018 / Revised: 21 March 2018 / Accepted: 5 April 2018 / Published: 9 April 2018
(This article belongs to the Special Issue Wafer Level Packaging of MEMS)
A millimeter-wave substrate integrated waveguide (SIW) has been demonstrated using micromachined tungsten-coated through glass silicon via (TGSV) structures. Two-step deep reactive ion etching (DRIE) of silicon vias and selective tungsten coating onto them using a shadow mask are combined with glass reflow techniques to realize a glass substrate with metal-coated TGSVs for millimeter-wave applications. The proposed metal-coated TGSV structures effectively replace the metallic vias in conventional through glass via (TGV) substrates, in which an additional individual glass machining process to form micro holes in the glass substrate as well as a time-consuming metal-filling process are required. This metal-coated TGSV substrate is applied to fabricate a SIW operating at Ka-band as a test vehicle. The fabricated SIW shows an average insertion loss of 0.69 ± 0.18 dB and a return loss better than 10 dB in a frequency range from 20 GHz to 45 GHz. View Full-Text
Keywords: substrate integrated waveguide (SIW); tungsten-coated through glass silicon via (TGVS); through glass via (TGV); glass reflow substrate integrated waveguide (SIW); tungsten-coated through glass silicon via (TGVS); through glass via (TGV); glass reflow
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Hyeon, I.-J.; Baek, C.-W. Millimeter-Wave Substrate Integrated Waveguide Using Micromachined Tungsten-Coated Through Glass Silicon Via Structures. Micromachines 2018, 9, 172.

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