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Open AccessArticle

A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology

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Ministerial Key Laboratory of JGMT, Nanjing University of Science and Technology, Nanjing 210094, China
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Semiconductor Device Research Laboratory, Terahertz Research Centre, CAEP, Chengdu 611731, China
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Author to whom correspondence should be addressed.
Academic Editor: Geok Ing Ng
Micromachines 2015, 6(3), 390-395; https://doi.org/10.3390/mi6030390
Received: 2 February 2015 / Revised: 23 February 2015 / Accepted: 24 February 2015 / Published: 23 March 2015
(This article belongs to the Special Issue Advances in MMICs)
This paper presents a reflection-type phase shifter (RTPS) at W-band in a 0.13 µm complementary metal oxide semiconductor (CMOS) process. The RTPS is composed of a 90° hybrid coupler and two identical reflection loads. Lumped-distributed element transmission line is introduced in the 90° hybrid coupler to reduce the chip size. Series inductor-capacitor (LC) resonators are used as the reflective loads and parallel inductors are deployed to reduce insertion loss variation. By cascading two-stage RTPS, 90° phase shifting range and 10.5 dB insertion loss with 1 dB variations from 80 GHz to 90 GHz are achieved. An impressive 0.1 dB variation is obtained at 86 GHz. View Full-Text
Keywords: W-band; reflection-type phase shifter; insertion loss variation; series LC resonators; lumped and distributed elements; CMOS technology W-band; reflection-type phase shifter; insertion loss variation; series LC resonators; lumped and distributed elements; CMOS technology
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Deng, X.-D.; Li, Y.; Wu, W.; Xiong, Y.-Z. A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology. Micromachines 2015, 6, 390-395.

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