Liu, Y.; Li, X.; Zhang, D.-H.; Fan, M.-Q.; Wang, X.-P.; Jin, Y.-J.
High-Indium-Composition, Ultra-Low-Power GaAsSb/InGaAs Heterojunction Tunnel Field-Effect Transistors. Micromachines 2026, 17, 149.
https://doi.org/10.3390/mi17020149
AMA Style
Liu Y, Li X, Zhang D-H, Fan M-Q, Wang X-P, Jin Y-J.
High-Indium-Composition, Ultra-Low-Power GaAsSb/InGaAs Heterojunction Tunnel Field-Effect Transistors. Micromachines. 2026; 17(2):149.
https://doi.org/10.3390/mi17020149
Chicago/Turabian Style
Liu, Yan, Xiang Li, Dao-Hua Zhang, Meng-Qi Fan, Xiao-Ping Wang, and Yun-Jiang Jin.
2026. "High-Indium-Composition, Ultra-Low-Power GaAsSb/InGaAs Heterojunction Tunnel Field-Effect Transistors" Micromachines 17, no. 2: 149.
https://doi.org/10.3390/mi17020149
APA Style
Liu, Y., Li, X., Zhang, D.-H., Fan, M.-Q., Wang, X.-P., & Jin, Y.-J.
(2026). High-Indium-Composition, Ultra-Low-Power GaAsSb/InGaAs Heterojunction Tunnel Field-Effect Transistors. Micromachines, 17(2), 149.
https://doi.org/10.3390/mi17020149