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Journal: Micromachines, 2025
Volume: 16
Number: 779

Article: Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer
Authors: by Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie and J. Ajayan
Link: https://www.mdpi.com/2072-666X/16/7/779

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