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Journal: Micromachines, 2025
Volume: 16
Number: 779
Article:
Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer
Authors:
by
Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie and J. Ajayan
Link:
https://www.mdpi.com/2072-666X/16/7/779
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