Lodhi, M.E.A.; Ansari, A.Q.; Loan, S.A.; Urooj, S.; Nasser, N.
Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis. Micromachines 2025, 16, 452.
https://doi.org/10.3390/mi16040452
AMA Style
Lodhi MEA, Ansari AQ, Loan SA, Urooj S, Nasser N.
Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis. Micromachines. 2025; 16(4):452.
https://doi.org/10.3390/mi16040452
Chicago/Turabian Style
Lodhi, M. Ejaz Aslam, Abdul Quaiyum Ansari, Sajad A. Loan, Shabana Urooj, and Nidal Nasser.
2025. "Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis" Micromachines 16, no. 4: 452.
https://doi.org/10.3390/mi16040452
APA Style
Lodhi, M. E. A., Ansari, A. Q., Loan, S. A., Urooj, S., & Nasser, N.
(2025). Investigation of Channel Mobility Enhancement Techniques Using Si/SiGe/GeSn Materials in Orthogonally Oriented Selective Buried Triple Gate Vertical Power MOSFET: Design and Performance Analysis. Micromachines, 16(4), 452.
https://doi.org/10.3390/mi16040452
