Gavalas, M.; Gallou, Y.; Chaussende, D.; Blanquet, E.; Mercier, F.; Zekentes, K.
Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization. Micromachines 2025, 16, 276.
https://doi.org/10.3390/mi16030276
AMA Style
Gavalas M, Gallou Y, Chaussende D, Blanquet E, Mercier F, Zekentes K.
Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization. Micromachines. 2025; 16(3):276.
https://doi.org/10.3390/mi16030276
Chicago/Turabian Style
Gavalas, Michail, Yann Gallou, Didier Chaussende, Elisabeth Blanquet, Frédéric Mercier, and Konstantinos Zekentes.
2025. "Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization" Micromachines 16, no. 3: 276.
https://doi.org/10.3390/mi16030276
APA Style
Gavalas, M., Gallou, Y., Chaussende, D., Blanquet, E., Mercier, F., & Zekentes, K.
(2025). Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization. Micromachines, 16(3), 276.
https://doi.org/10.3390/mi16030276