Xie, W.; Chen, X.; Zhang, L.; Lu, X.; Ding, B.; Xie, A.
The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures. Micromachines 2025, 16, 221.
https://doi.org/10.3390/mi16020221
AMA Style
Xie W, Chen X, Zhang L, Lu X, Ding B, Xie A.
The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures. Micromachines. 2025; 16(2):221.
https://doi.org/10.3390/mi16020221
Chicago/Turabian Style
Xie, Wenting, Xiaoting Chen, Liting Zhang, Xiangjun Lu, Bing Ding, and An Xie.
2025. "The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures" Micromachines 16, no. 2: 221.
https://doi.org/10.3390/mi16020221
APA Style
Xie, W., Chen, X., Zhang, L., Lu, X., Ding, B., & Xie, A.
(2025). The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures. Micromachines, 16(2), 221.
https://doi.org/10.3390/mi16020221
