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Journal: Micromachines, 2025
Volume: 16
Number: 1408
Article:
A High-Temperature Stable Ohmic Contact Process on Lightly Doped n-Type 4H-SiC Based on a W/C Multilayer Structure
Authors:
by
Yu Zhou, Fengyu Du, Qingwen Song, Xiaoyan Tang, Hao Yuan, Chao Han, Chunfu Zhang and Yuming Zhang
Link:
https://www.mdpi.com/2072-666X/16/12/1408
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