Cao, Y.; Zhang, Z.; Zhang, L.; Li, M.; Su, S.; Zhang, W.; Xu, Y.; Huang, D.; Liu, L.; Lv, L.;
et al. Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. Micromachines 2025, 16, 1216.
https://doi.org/10.3390/mi16111216
AMA Style
Cao Y, Zhang Z, Zhang L, Li M, Su S, Zhang W, Xu Y, Huang D, Liu L, Lv L,
et al. Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. Micromachines. 2025; 16(11):1216.
https://doi.org/10.3390/mi16111216
Chicago/Turabian Style
Cao, Yanrong, Zhixian Zhang, Longtao Zhang, Miaofen Li, Shuo Su, Weiwei Zhang, Youli Xu, Dingqi Huang, Le Liu, Ling Lv,
and et al. 2025. "Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation" Micromachines 16, no. 11: 1216.
https://doi.org/10.3390/mi16111216
APA Style
Cao, Y., Zhang, Z., Zhang, L., Li, M., Su, S., Zhang, W., Xu, Y., Huang, D., Liu, L., Lv, L., & Ma, X.
(2025). Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. Micromachines, 16(11), 1216.
https://doi.org/10.3390/mi16111216
