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Journal: MicromachinesVolume: 16Number: 1216
Article: Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation
- Authors:
- Yanrong Cao 1,2,*,
- Zhixian Zhang 1,2 and
- Xiaohua Ma 2
- et al.
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