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Journal: Micromachines, 2024
Volume: 15
Number: 1158

Article: Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer
Authors: by Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun and Xiaorong Luo
Link: https://www.mdpi.com/2072-666X/15/9/1158

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