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Volume 15
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10.3390/mi15091077
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Article

A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process

by
Jianing Hu
1,
Jialong Wan
2,
Yi Shen
1,
Wei Zhao
1 and
Jiang Luo
1,3,*
1
School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
2
School of Microelectronics, South China University of Technology, Guangzhou 511442, China
3
State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China
*
Author to whom correspondence should be addressed.
Micromachines 2024, 15(9), 1077; https://doi.org/10.3390/mi15091077
Submission received: 13 August 2024 / Revised: 24 August 2024 / Accepted: 26 August 2024 / Published: 26 August 2024
(This article belongs to the Special Issue Broadband Terahertz Devices and Communication Technologies, 2nd Edition)
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Abstract

This paper introduces a high-gain wideband power amplifier (PA) designed for V-band applications, operating across 52 to 65 GHz. The proposed PA design employs a combination of techniques, including pole-gain distribution, base-capacitive peaking, and the parallel configuration of multiple small-sized transistors. These strategies enable significant bandwidth extension while maintaining high gain, substantial output power, and a compact footprint. A two-stage PA using the combination technique was developed and fabricated in a 130 nm SiGe BiCMOS process. The PA prototype achieved a peak gain of 27.3 dB at 64 GHz, with a 3 dB bandwidth exceeding 13 GHz and a fractional bandwidth greater than 22.2%. It delivered a maximum saturated output power of 19.7 dBm and an output 1 dB compression point of 18 dBm. Moreover, the PA chip occupied a total silicon area of 0.57 mm2, including all testing pads with a compact core size of 0.198 mm2.
Keywords: millimeter-wave (mm-wave); SiGe BiCMOS; bandwidth extension; power amplifier millimeter-wave (mm-wave); SiGe BiCMOS; bandwidth extension; power amplifier

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MDPI and ACS Style

Hu, J.; Wan, J.; Shen, Y.; Zhao, W.; Luo, J. A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process. Micromachines 2024, 15, 1077. https://doi.org/10.3390/mi15091077

AMA Style

Hu J, Wan J, Shen Y, Zhao W, Luo J. A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process. Micromachines. 2024; 15(9):1077. https://doi.org/10.3390/mi15091077

Chicago/Turabian Style

Hu, Jianing, Jialong Wan, Yi Shen, Wei Zhao, and Jiang Luo. 2024. "A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process" Micromachines 15, no. 9: 1077. https://doi.org/10.3390/mi15091077

APA Style

Hu, J., Wan, J., Shen, Y., Zhao, W., & Luo, J. (2024). A V-Band Wideband Power Amplifier with High Gain in a 130 nm SiGe BiCMOS Process. Micromachines, 15(9), 1077. https://doi.org/10.3390/mi15091077

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