A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process

Shen, Yi; Luo, Jiang; Zhao, Wei; Dai, Jun-Yan; Cheng, Qiang

doi:10.3390/mi15101248

Open AccessArticle

A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process

by

Yi Shen

¹,

Jiang Luo

^1,*

,

Wei Zhao

¹,

Jun-Yan Dai

² and

Qiang Cheng

^2,*

¹

School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China

²

State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China

^*

Authors to whom correspondence should be addressed.

Micromachines 2024, 15(10), 1248; https://doi.org/10.3390/mi15101248

Submission received: 20 September 2024 / Revised: 8 October 2024 / Accepted: 9 October 2024 / Published: 11 October 2024

(This article belongs to the Special Issue Broadband Terahertz Devices and Communication Technologies, 2nd Edition)

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Abstract

This paper presents a compact V-band low-noise amplifier (LNA) featuring temperature compensation, implemented in a 130 nm SiGe BiCMOS process. A negative temperature coefficient bias circuit generates an adaptive current for temperature compensation, enhancing the LNA’s temperature robustness. A T-type inductive network is employed to establish two dominant poles at different frequencies, significantly broadening the amplifier’s bandwidth. Over the wide temperature range of −55 °C to 85 °C, the LNA prototype exhibits a gain variation of less than 1.5 dB at test frequencies from 40 GHz to 65 GHz, corresponding to a temperature coefficient of 0.01 dB/°C. At −55 °C, 25 °C, and 85 °C, the measured peak gains are 25.5 dB, 25 dB, and 24.4 dB, respectively, with minimum noise figures (NF) of 3.0 dB, 3.5 dB, and 4.2 dB, and DC power consumptions of 22.3 mW, 27.6 mW, and 34.4 mW. Moreover, the total silicon area of the LNA chip is 0.37 mm², including all test pads, while the core area is only 0.09 mm².

Keywords: millimeter-wave (mm-wave); V-band; SiGe BiCMOS; temperature compensation; low-noise amplifier

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MDPI and ACS Style

Shen, Y.; Luo, J.; Zhao, W.; Dai, J.-Y.; Cheng, Q. A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process. Micromachines 2024, 15, 1248. https://doi.org/10.3390/mi15101248

AMA Style

Shen Y, Luo J, Zhao W, Dai J-Y, Cheng Q. A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process. Micromachines. 2024; 15(10):1248. https://doi.org/10.3390/mi15101248

Chicago/Turabian Style

Shen, Yi, Jiang Luo, Wei Zhao, Jun-Yan Dai, and Qiang Cheng. 2024. "A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process" Micromachines 15, no. 10: 1248. https://doi.org/10.3390/mi15101248

APA Style

Shen, Y., Luo, J., Zhao, W., Dai, J.-Y., & Cheng, Q. (2024). A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process. Micromachines, 15(10), 1248. https://doi.org/10.3390/mi15101248

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A Compact V-Band Temperature Compensation Low-Noise Amplifier in a 130 nm SiGe BiCMOS Process

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