Next Article in Journal
Engineered Nanomaterial Coatings for Food Packaging: Design, Manufacturing, Regulatory, and Sustainability Implications
Next Article in Special Issue
Analysis and Verification of Heat Dissipation Structures Embedded in Substrates in Power Chips Based on Square Frustums Thermal through Silicon Vias
Previous Article in Journal
Effects of Oxidized Metal Powders on Pore Defects in Powder-Fed Direct Energy Deposition
Previous Article in Special Issue
A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Micromachines
Volume 15
Issue 2
10.3390/mi15020246
micromachines-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Communication

Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3–1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers

by
Ruiliang Li
1,†,
Shaohua Zhou
1,2,3,†,
Cheng Yang
1,* and
Jian Wang
3,4,*
1
Qingdao Institute for Marine Technology of Tianjin University, Qingdao 266200, China
2
ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 310058, China
3
School of Microelectronics, Tianjin University, Tianjin 300072, China
4
Shandong Engineering Technology Research Center of Marine Information Perception and Transmission, Qingdao 266200, China
*
Authors to whom correspondence should be addressed.
†
These authors contributed equally to this work.
Micromachines 2024, 15(2), 246; https://doi.org/10.3390/mi15020246
Submission received: 18 December 2023 / Revised: 25 January 2024 / Accepted: 5 February 2024 / Published: 6 February 2024
(This article belongs to the Special Issue Power Semiconductor Devices and Applications, 2nd Edition)
Browse Figures
Versions Notes

Abstract

A power amplifier (PA) stands as a central module within the electronic information system (EIS), and any variation in a PA’s specifications has a direct impact on the EIS’s performance, especially in the face of temperature fluctuations. In examining the influence of PA specification changes on the EIS, we employed support vector machine (SVM) to model the behavior of the temperature characteristics of 0.3–1.1 GHz complementary metal oxide semiconductor (CMOS) class-A broadband PAs. The results show that the parameters of S11, S12, S21, and S22 can be effectively modeled. SVM outperforms Elman and GRNN in terms of combined modeling time and modeling accuracy. This research can be extended to modeling the behavior of other types of power amplifiers or devices and circuits.
Keywords: PA; temperature; SVM; model; CMOS; class-A PA; temperature; SVM; model; CMOS; class-A

Share and Cite

MDPI and ACS Style

Li, R.; Zhou, S.; Yang, C.; Wang, J. Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3–1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers. Micromachines 2024, 15, 246. https://doi.org/10.3390/mi15020246

AMA Style

Li R, Zhou S, Yang C, Wang J. Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3–1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers. Micromachines. 2024; 15(2):246. https://doi.org/10.3390/mi15020246

Chicago/Turabian Style

Li, Ruiliang, Shaohua Zhou, Cheng Yang, and Jian Wang. 2024. "Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3–1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers" Micromachines 15, no. 2: 246. https://doi.org/10.3390/mi15020246

APA Style

Li, R., Zhou, S., Yang, C., & Wang, J. (2024). Investigation and Modeling of the Behavior of Temperature Characteristics of 0.3–1.1 GHz Complementary Metal Oxide Semiconductor Class-A Broadband Power Amplifiers. Micromachines, 15(2), 246. https://doi.org/10.3390/mi15020246

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop