Lv, H.; Cao, Y.; Ma, M.; Wang, Z.; Zhang, X.; Chen, C.; Wu, L.; Lv, L.; Zheng, X.; Wang, Y.;
et al. Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs. Micromachines 2023, 14, 1457.
https://doi.org/10.3390/mi14071457
AMA Style
Lv H, Cao Y, Ma M, Wang Z, Zhang X, Chen C, Wu L, Lv L, Zheng X, Wang Y,
et al. Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs. Micromachines. 2023; 14(7):1457.
https://doi.org/10.3390/mi14071457
Chicago/Turabian Style
Lv, Hanghang, Yanrong Cao, Maodan Ma, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Yongkun Wang,
and et al. 2023. "Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs" Micromachines 14, no. 7: 1457.
https://doi.org/10.3390/mi14071457
APA Style
Lv, H., Cao, Y., Ma, M., Wang, Z., Zhang, X., Chen, C., Wu, L., Lv, L., Zheng, X., Wang, Y., Tian, W., & Ma, X.
(2023). Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs. Micromachines, 14(7), 1457.
https://doi.org/10.3390/mi14071457