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Journal: Micromachines, 2023
Volume: 14
Number: 977
Article:
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors
Authors:
by
Myeongsu Chae and Hyungtak Kim
Link:
https://www.mdpi.com/2072-666X/14/5/977
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