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Volume 14
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10.3390/mi14020423
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Communication

Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT

by
Yao-Luen Shen
1,*,
Chih-Yao Chang
1,
Po-Liang Chen
1,
Cheng-Chan Tai
1,
Tian-Li Wu
2,
Yuh-Renn Wu
3 and
Chih-Fang Huang
1,*
1
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30010, Taiwan
2
International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
3
Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan
*
Authors to whom correspondence should be addressed.
Micromachines 2023, 14(2), 423; https://doi.org/10.3390/mi14020423
Submission received: 18 January 2023 / Revised: 30 January 2023 / Accepted: 7 February 2023 / Published: 10 February 2023
(This article belongs to the Special Issue GaN-Based Semiconductor Devices, Volume II)
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Abstract

In this study, AlGaN/GaN light-emitting HEMTs (LE-HEMT) with a single quantum well inserted in different locations in the epitaxy layers are fabricated and analyzed. For both structures, light-emitting originated from electrons in the 2DEG and holes from the p-GaN for radiative recombination is located in the quantum well. To investigate the importance of the location of single quantum well, optical characteristics are compared by simulation and experimental results. The experimental results show that the main light-emitting wavelength is shifted from 365 nm in the UV range to 525 nm in the visible range when the radiative recombination is confined in the quantum well and dominates among other mechanisms. Epi B, which has a quantum well above the AlGaN barrier layer in contrast to Epi A which has a quantum well underneath the barrier, shows better intensity and uniformity in light-emitting. According to the simulation results showing the radiative distribution and electron concentrations for both structures, the lower quantum efficiency is due to the diverse current paths in Epi A. On the other hand, Epi B shows better quantum confinement and therefore better luminescence in the same bias condition, which is consistent with experimental observations. These findings are critical for advancing the performance of LE-HEMTs.
Keywords: GaN; light-emitting; HEMT; monolithic integration; single quantum well; simulation GaN; light-emitting; HEMT; monolithic integration; single quantum well; simulation

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MDPI and ACS Style

Shen, Y.-L.; Chang, C.-Y.; Chen, P.-L.; Tai, C.-C.; Wu, T.-L.; Wu, Y.-R.; Huang, C.-F. Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT. Micromachines 2023, 14, 423. https://doi.org/10.3390/mi14020423

AMA Style

Shen Y-L, Chang C-Y, Chen P-L, Tai C-C, Wu T-L, Wu Y-R, Huang C-F. Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT. Micromachines. 2023; 14(2):423. https://doi.org/10.3390/mi14020423

Chicago/Turabian Style

Shen, Yao-Luen, Chih-Yao Chang, Po-Liang Chen, Cheng-Chan Tai, Tian-Li Wu, Yuh-Renn Wu, and Chih-Fang Huang. 2023. "Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT" Micromachines 14, no. 2: 423. https://doi.org/10.3390/mi14020423

APA Style

Shen, Y.-L., Chang, C.-Y., Chen, P.-L., Tai, C.-C., Wu, T.-L., Wu, Y.-R., & Huang, C.-F. (2023). Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT. Micromachines, 14(2), 423. https://doi.org/10.3390/mi14020423

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