Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

Tyaginov, Stanislav; Bury, Erik; Grill, Alexander; Yu, Zhuoqing; Makarov, Alexander; De Keersgieter, An; Vexler, Mikhail; Vandemaele, Michiel; Wang, Runsheng; Spessot, Alessio; Chasin, Adrian; Kaczer, Ben

doi:10.3390/mi14112018

Open AccessArticle

Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

by

Stanislav Tyaginov

^1,*

,

Erik Bury

¹,

Alexander Grill

¹

,

Zhuoqing Yu

²,

Alexander Makarov

¹,

An De Keersgieter

¹,

Mikhail Vexler

³,

Michiel Vandemaele

¹

,

Runsheng Wang

²,

Alessio Spessot

¹,

Adrian Chasin

¹ and

Ben Kaczer

¹

Imec, Kapeldreef 75, 3001 Leuven, Belgium

²

Institute of Microelectronics, Peking University, Beijing 100871, China

³

A.F. Ioffe Institute, Polytechnicheskaya 26, 194021 St.-Petersburg, Russia

^*

Author to whom correspondence should be addressed.

Micromachines 2023, 14(11), 2018; https://doi.org/10.3390/mi14112018

Submission received: 6 October 2023 / Revised: 23 October 2023 / Accepted: 25 October 2023 / Published: 30 October 2023

(This article belongs to the Special Issue State-of-the-Art CMOS and MEMS Devices)

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Abstract

We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (

V_{gs}

and

V_{ds}

, respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low

V_{gs}

and relatively high

V_{ds}

. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages

{V_{gs}, V_{ds}}

.

Keywords: hot-carrier degradation; compact physics model; secondary carriers; impact ionization; interface traps; carrier transport

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MDPI and ACS Style

Tyaginov, S.; Bury, E.; Grill, A.; Yu, Z.; Makarov, A.; De Keersgieter, A.; Vexler, M.; Vandemaele, M.; Wang, R.; Spessot, A.; et al. Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range. Micromachines 2023, 14, 2018. https://doi.org/10.3390/mi14112018

AMA Style

Tyaginov S, Bury E, Grill A, Yu Z, Makarov A, De Keersgieter A, Vexler M, Vandemaele M, Wang R, Spessot A, et al. Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range. Micromachines. 2023; 14(11):2018. https://doi.org/10.3390/mi14112018

Chicago/Turabian Style

Tyaginov, Stanislav, Erik Bury, Alexander Grill, Zhuoqing Yu, Alexander Makarov, An De Keersgieter, Mikhail Vexler, Michiel Vandemaele, Runsheng Wang, Alessio Spessot, and et al. 2023. "Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range" Micromachines 14, no. 11: 2018. https://doi.org/10.3390/mi14112018

APA Style

Tyaginov, S., Bury, E., Grill, A., Yu, Z., Makarov, A., De Keersgieter, A., Vexler, M., Vandemaele, M., Wang, R., Spessot, A., Chasin, A., & Kaczer, B. (2023). Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range. Micromachines, 14(11), 2018. https://doi.org/10.3390/mi14112018

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Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

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