Guan, H.; Shen, G.; Liu, S.; Jiang, C.; Wu, J.
A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application. Micromachines 2023, 14, 168.
https://doi.org/10.3390/mi14010168
AMA Style
Guan H, Shen G, Liu S, Jiang C, Wu J.
A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application. Micromachines. 2023; 14(1):168.
https://doi.org/10.3390/mi14010168
Chicago/Turabian Style
Guan, He, Guiyu Shen, Shibin Liu, Chengyu Jiang, and Jingbo Wu.
2023. "A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application" Micromachines 14, no. 1: 168.
https://doi.org/10.3390/mi14010168
APA Style
Guan, H., Shen, G., Liu, S., Jiang, C., & Wu, J.
(2023). A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application. Micromachines, 14(1), 168.
https://doi.org/10.3390/mi14010168
