High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application

Zhang, Penghao; Wang, Luyu; Zhu, Kaiyue; Yang, Yannan; Fan, Rong; Pan, Maolin; Xu, Saisheng; Xu, Min; Wang, Chen; Wu, Chunlei; Zhang, David Wei

doi:10.3390/mi13040589

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High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application

by

Penghao Zhang

¹,

Luyu Wang

¹,

Kaiyue Zhu

²,

Yannan Yang

¹,

Rong Fan

¹,

Maolin Pan

¹,

Saisheng Xu

¹,

Min Xu

^1,*,

Chen Wang

^1,*,

Chunlei Wu

¹ and

David Wei Zhang

^1,*

¹

State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

²

Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, China

^*

Authors to whom correspondence should be addressed.

Micromachines 2022, 13(4), 589; https://doi.org/10.3390/mi13040589

Submission received: 8 March 2022 / Revised: 5 April 2022 / Accepted: 6 April 2022 / Published: 9 April 2022

(This article belongs to the Special Issue Advanced Micro- and Nano-Manufacturing Technologies)

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Abstract

A systematic study of the selective etching of p-GaN over AlGaN was carried out using a BCl₃/SF₆ inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a p-GaN etch rate of 3.4 nm/min was realized by optimizing the SF₆ concentration, chamber pressure, ICP and bias power. The surface morphology after p-GaN etching was characterized by AFM for both selective and nonselective processes, showing the exposed AlGaN surface RMS values of 0.43 nm and 0.99 nm, respectively. MIS-capacitor devices fabricated on the AlGaN surface with ALD-Al₂O₃ as the gate dielectric after p-GaN etch showed the significant benefit of BCl₃/SF₆ selective etch process.

Keywords: p-GaN; selective etching; ICP; surface morphology; MIS capacitor

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MDPI and ACS Style

Zhang, P.; Wang, L.; Zhu, K.; Yang, Y.; Fan, R.; Pan, M.; Xu, S.; Xu, M.; Wang, C.; Wu, C.; et al. High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application. Micromachines 2022, 13, 589. https://doi.org/10.3390/mi13040589

AMA Style

Zhang P, Wang L, Zhu K, Yang Y, Fan R, Pan M, Xu S, Xu M, Wang C, Wu C, et al. High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application. Micromachines. 2022; 13(4):589. https://doi.org/10.3390/mi13040589

Chicago/Turabian Style

Zhang, Penghao, Luyu Wang, Kaiyue Zhu, Yannan Yang, Rong Fan, Maolin Pan, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, and et al. 2022. "High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application" Micromachines 13, no. 4: 589. https://doi.org/10.3390/mi13040589

APA Style

Zhang, P., Wang, L., Zhu, K., Yang, Y., Fan, R., Pan, M., Xu, S., Xu, M., Wang, C., Wu, C., & Zhang, D. W. (2022). High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application. Micromachines, 13(4), 589. https://doi.org/10.3390/mi13040589

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High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application

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