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Volume 13
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10.3390/mi13122250
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Article

An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance

by
Zebin Xu
1,
Jiahui Yan
1,
Meilin Ji
1,
Yongxin Zhou
1,
Dandan Wang
2,
Yuanzhi Wang
3,
Zhihong Mai
2,
Xuefeng Zhao
4,
Tianxiang Nan
5,
Guozhong Xing
4 and
Songsong Zhang
1,2,*
1
School of Microelectronics, Shanghai University, Shanghai 201800, China
2
JiuFengShan Laboratory, Future Science and Technology City, Wuhan 420000, China
3
Shanghai Industrial μTechnology Research Institute, Shanghai 201899, China
4
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
5
Institute of Microelectronis, Tsinghua University, Beijing 100084, China
*
Author to whom correspondence should be addressed.
Micromachines 2022, 13(12), 2250; https://doi.org/10.3390/mi13122250
Submission received: 17 October 2022 / Revised: 2 December 2022 / Accepted: 14 December 2022 / Published: 17 December 2022
(This article belongs to the Special Issue Design, Fabrication, Testing of MEMS/NEMS)
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Abstract

This paper presents a piezoresistive differential pressure sensor based on a silicon-on-insulator (SOI) structure for low pressure detection from 0 to 30 kPa. In the design phase, the stress distribution on the sensing membrane surface is simulated, and the doping concentration and geometry of the piezoresistor are evaluated. By optimizing the process, the realization of the pressure sensing diaphragm with a controllable thickness is achieved, and good ohmic contact is ensured. To obtain higher sensitivity and high temperature stability, an SOI structure with a 1.5 µm ultra-thin monocrystalline silicon layer is used in device manufacturing. The device diaphragm size is 700 µm × 700 µm × 2.1 µm. The experimental results show that the fabricated piezoresistive pressure sensor has a high sensitivity of 2.255 mV/V/kPa and a sensing resolution of less than 100 Pa at room temperature. The sensor has a temperature coefficient of sensitivity (TCS) of −0.221 %FS/°C and a temperature coefficient of offset (TCO) of −0.209 %FS/°C at operating temperatures ranging from 20 °C to 160 °C. The reported piezoresistive microelectromechanical systems (MEMS) pressure sensors are fabricated on 8-inch wafers using standard CMOS-compatible processes, which provides a volume solution for embedded integrated precision detection applications of air pressure, offering better insights for high-temperature and miniaturized low-pressure sensor research.
Keywords: high-sensitivity; low temperature drift; piezoresistive effect; silicon-on-insulator (SOI) pressure sensor; microelectromechanical systems (MEMS) high-sensitivity; low temperature drift; piezoresistive effect; silicon-on-insulator (SOI) pressure sensor; microelectromechanical systems (MEMS)

Share and Cite

MDPI and ACS Style

Xu, Z.; Yan, J.; Ji, M.; Zhou, Y.; Wang, D.; Wang, Y.; Mai, Z.; Zhao, X.; Nan, T.; Xing, G.; et al. An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance. Micromachines 2022, 13, 2250. https://doi.org/10.3390/mi13122250

AMA Style

Xu Z, Yan J, Ji M, Zhou Y, Wang D, Wang Y, Mai Z, Zhao X, Nan T, Xing G, et al. An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance. Micromachines. 2022; 13(12):2250. https://doi.org/10.3390/mi13122250

Chicago/Turabian Style

Xu, Zebin, Jiahui Yan, Meilin Ji, Yongxin Zhou, Dandan Wang, Yuanzhi Wang, Zhihong Mai, Xuefeng Zhao, Tianxiang Nan, Guozhong Xing, and et al. 2022. "An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance" Micromachines 13, no. 12: 2250. https://doi.org/10.3390/mi13122250

APA Style

Xu, Z., Yan, J., Ji, M., Zhou, Y., Wang, D., Wang, Y., Mai, Z., Zhao, X., Nan, T., Xing, G., & Zhang, S. (2022). An SOI-Structured Piezoresistive Differential Pressure Sensor with High Performance. Micromachines, 13(12), 2250. https://doi.org/10.3390/mi13122250

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