Article Versions Notes

Dai Y, Ye Q, Dang J, Lu Z, Zhang W, Lei X, Zhang Y, Zhang H, Liao C, Li Y, et al. Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode. Micromachines. 2021; 12(8):919. https://doi.org/10.3390/mi12080919

Dai, Yang, Qingsong Ye, Jiangtao Dang, Zhaoyang Lu, Weiwei Zhang, Xiaoyi Lei, Yunyao Zhang, Han Zhang, Chenguang Liao, Yang Li, and et al. 2021. "Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode" Micromachines 12, no. 8: 919. https://doi.org/10.3390/mi12080919

Dai, Y., Ye, Q., Dang, J., Lu, Z., Zhang, W., Lei, X., Zhang, Y., Zhang, H., Liao, C., Li, Y., & Zhao, W. (2021). Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode. Micromachines, 12(8), 919. https://doi.org/10.3390/mi12080919