A New Approach for the Control and Reduction of Warpage and Residual Stresses in Bonded Wafer
1
Department of Civil and Environmental Engineering, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy
2
STMicroelectronics, Via Camillo Olivetti 2, 20864 Agrate Brianza, Italy
*
Author to whom correspondence should be addressed.
Academic Editor: Lucia Romano
Micromachines 2021, 12(4), 361; https://doi.org/10.3390/mi12040361
Received: 5 February 2021
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Revised: 20 March 2021
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Accepted: 24 March 2021
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Published: 26 March 2021
(This article belongs to the Special Issue Advanced MEMS/NEMS Technology, Volume III)
A geometrical modification on silicon wafers before the bonding process, aimed to decrease (1) the residual stress caused by glass frit bonding, is proposed. Finite element modeling showed that (2) by introducing this modification, the wafer out-of-plane deflection was decreased by 34%. Moreover, (3) fabricated wafers with the proposed geometrical feature demonstrated an improvement for the (4) warpage with respect to the plain wafers. A benefit for curvature variation and overall shape of the (5) bonded wafers was also observed.
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Keywords:
glass frit bonding; warpage; residual stress; finite element analysis
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MDPI and ACS Style
Farshchi Yazdi, S.A.F.; Garavaglia, M.; Ghisi, A.; Corigliano, A. A New Approach for the Control and Reduction of Warpage and Residual Stresses in Bonded Wafer. Micromachines 2021, 12, 361. https://doi.org/10.3390/mi12040361
AMA Style
Farshchi Yazdi SAF, Garavaglia M, Ghisi A, Corigliano A. A New Approach for the Control and Reduction of Warpage and Residual Stresses in Bonded Wafer. Micromachines. 2021; 12(4):361. https://doi.org/10.3390/mi12040361
Chicago/Turabian StyleFarshchi Yazdi, Seyed A.F., Matteo Garavaglia, Aldo Ghisi, and Alberto Corigliano. 2021. "A New Approach for the Control and Reduction of Warpage and Residual Stresses in Bonded Wafer" Micromachines 12, no. 4: 361. https://doi.org/10.3390/mi12040361
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