Sung, J.-Y.; Jeong, J.-K.; Ko, W.-S.; Byun, J.-H.; Lee, H.-D.; Lee, G.-W.
High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. Micromachines 2021, 12, 1316.
https://doi.org/10.3390/mi12111316
AMA Style
Sung J-Y, Jeong J-K, Ko W-S, Byun J-H, Lee H-D, Lee G-W.
High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. Micromachines. 2021; 12(11):1316.
https://doi.org/10.3390/mi12111316
Chicago/Turabian Style
Sung, Jae-Young, Jun-Kyo Jeong, Woon-San Ko, Jun-Ho Byun, Hi-Deok Lee, and Ga-Won Lee.
2021. "High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications" Micromachines 12, no. 11: 1316.
https://doi.org/10.3390/mi12111316
APA Style
Sung, J.-Y., Jeong, J.-K., Ko, W.-S., Byun, J.-H., Lee, H.-D., & Lee, G.-W.
(2021). High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. Micromachines, 12(11), 1316.
https://doi.org/10.3390/mi12111316