Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor
Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China
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Micromachines 2021, 12(1), 19; https://doi.org/10.3390/mi12010019
Received: 23 November 2020
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Revised: 21 December 2020
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Accepted: 24 December 2020
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Published: 27 December 2020
Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. In a dielectric-modulated LTFET (DM-LTFET), a cavity is trenched under the gate electrode in the vertical direction and filled with biomolecules to realize the function of the sensor. A 2D simulator was utilized to study the sensitivity of a DM-LTFET sensor. The simulation results show that the current sensitivity of the proposed structure could be as high as 2321, the threshold voltage sensitivity could reach 0.4, and the subthreshold swing sensitivity could reach 0.7. This shows that the DM-LTFET sensor is suitable for a high-sensitivity, low-power-consumption sensor field.
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Keywords:
dielectric-modulated L-shaped tunneling field-effect transistor (DM-LTFET); biosensor; sensitivity
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MDPI and ACS Style
Chong, C.; Liu, H.; Wang, S.; Chen, S.; Xie, H. Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor. Micromachines 2021, 12, 19. https://doi.org/10.3390/mi12010019
AMA Style
Chong C, Liu H, Wang S, Chen S, Xie H. Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor. Micromachines. 2021; 12(1):19. https://doi.org/10.3390/mi12010019
Chicago/Turabian StyleChong, Chen, Hongxia Liu, Shulong Wang, Shupeng Chen, and Haiwu Xie. 2021. "Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor" Micromachines 12, no. 1: 19. https://doi.org/10.3390/mi12010019
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