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Journal: Micromachines, 2020
Volume: 11
Number: 609

Article: Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions
Authors: by Jinlan Li, Chenxu Meng, Le Yu, Yun Li, Feng Yan, Ping Han and Xiaoli Ji
Link: https://www.mdpi.com/2072-666X/11/6/609

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