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Open AccessArticle

Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling

by Paola Lova *,† and Cesare Soci
School of Physical and Mathematical Sciences, Division of Physics and Applied Physics, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
Author to whom correspondence should be addressed.
Current Address: Dipartimento di Chimica e Chimica Industriale, Università degli Studi di Genova, Via Dodecaneso 31, 16146 Genova, Italy.
Micromachines 2020, 11(6), 573;
Received: 17 April 2020 / Revised: 28 May 2020 / Accepted: 4 June 2020 / Published: 5 June 2020
(This article belongs to the Special Issue Micro- and Nano-Fabrication by Metal Assisted Chemical Etching)
Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to further enhance photon absorption of GaAs and improve photovoltaic performance. To this end, metal-assisted chemical etching represents a simple, low-cost, and easy to scale-up microstructuring method, particularly when compared to dry etching methods. In this work, we show that the etched GaAs (black GaAs) has exceptional light trapping properties inducing a 120 times lower surface reflectance than that of polished GaAs and that the structured surface favors photon recycling. As a proof of principle, we investigate photon reabsorption in hybrid GaAs:poly (3-hexylthiophene) heterointerfaces. View Full-Text
Keywords: metal-assisted chemical etching; antireflection; black GaAs; photon recycling metal-assisted chemical etching; antireflection; black GaAs; photon recycling
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Lova, P.; Soci, C. Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling. Micromachines 2020, 11, 573.

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