Chien, F.-T.; Wang, Z.-Z.; Lin, C.-L.; Kang, T.-K.; Chen, C.-W.; Chiu, H.-C.
150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers. Micromachines 2020, 11, 504.
https://doi.org/10.3390/mi11050504
AMA Style
Chien F-T, Wang Z-Z, Lin C-L, Kang T-K, Chen C-W, Chiu H-C.
150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers. Micromachines. 2020; 11(5):504.
https://doi.org/10.3390/mi11050504
Chicago/Turabian Style
Chien, Feng-Tso, Zhi-Zhe Wang, Cheng-Li Lin, Tsung-Kuei Kang, Chii-Wen Chen, and Hsien-Chin Chiu.
2020. "150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers" Micromachines 11, no. 5: 504.
https://doi.org/10.3390/mi11050504
APA Style
Chien, F.-T., Wang, Z.-Z., Lin, C.-L., Kang, T.-K., Chen, C.-W., & Chiu, H.-C.
(2020). 150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers. Micromachines, 11(5), 504.
https://doi.org/10.3390/mi11050504