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Journal: Micromachines, 2020
Volume: 11
Number: 164
Article:
A Novel Germanium-Around-Source Gate-All-Around Tunnelling Field-Effect Transistor for Low-Power Applications
Authors:
by
Ke Han, Shanglin Long, Zhongliang Deng, Yannan Zhang and Jiawei Li
Link:
https://www.mdpi.com/2072-666X/11/2/164
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