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Journal: Micromachines, 2020
Volume: 11
Number: 163
Article:
Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
Authors:
by
Tian-Li Wu, Shun-Wei Tang and Hong-Jia Jiang
Link:
https://www.mdpi.com/2072-666X/11/2/163
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