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Journal: Micromachines, 2020
Volume: 11
Number: 163

Article: Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
Authors: by Tian-Li Wu, Shun-Wei Tang and Hong-Jia Jiang
Link: https://www.mdpi.com/2072-666X/11/2/163

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