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Article

Design and Implementation of a GaN-Based Three-Phase Active Power Filter

Department of Electrical Engineering, CEECS, National United University, Miaoli 36063, Taiwan
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Author to whom correspondence should be addressed.
Micromachines 2020, 11(2), 134; https://doi.org/10.3390/mi11020134
Received: 25 December 2019 / Revised: 21 January 2020 / Accepted: 22 January 2020 / Published: 24 January 2020
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
Renewable energy (RE)-based power generation systems and modern manufacturing facilities utilize a wide variety of power converters based on high-frequency power electronic devices and complex switching technologies. This has resulted in a noticeable degradation in the power quality (PQ) of power systems. To solve the aforementioned problem, advanced active power filters (APFs) with improved system performance and properly designed switching devices and control algorithms can provide a promising solution because an APF can compensate for voltage sag, harmonic currents, current imbalance, and active and reactive powers individually or simultaneously. This paper demonstrates, for the first time, the detailed design procedure and performance of a digitally controlled 2 kVA three-phase shunt APF system using gallium nitride (GaN) high electron mobility transistors (HEMTs). The designed digital control scheme consists of three type II controllers with a digital signal processor (DSP) as the control core. Using the proposed APF and control algorithms, fast and accurate compensation for harmonics, imbalance, and reactive power is achieved in both simulation and hardware tests, demonstrating the feasibility and effectiveness of the proposed system. Moreover, GaN HEMTs allow the system to achieve up to 97.2% efficiency. View Full-Text
Keywords: gallium nitride (GaN); power switching device; active power filter (APF); power quality (PQ) gallium nitride (GaN); power switching device; active power filter (APF); power quality (PQ)
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MDPI and ACS Style

Ma, C.-T.; Gu, Z.-H. Design and Implementation of a GaN-Based Three-Phase Active Power Filter. Micromachines 2020, 11, 134. https://doi.org/10.3390/mi11020134

AMA Style

Ma C-T, Gu Z-H. Design and Implementation of a GaN-Based Three-Phase Active Power Filter. Micromachines. 2020; 11(2):134. https://doi.org/10.3390/mi11020134

Chicago/Turabian Style

Ma, Chao-Tsung, and Zhen-Huang Gu. 2020. "Design and Implementation of a GaN-Based Three-Phase Active Power Filter" Micromachines 11, no. 2: 134. https://doi.org/10.3390/mi11020134

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