Next Article in Journal
Low-Cost Microfabrication Tool Box
Next Article in Special Issue
Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
Previous Article in Journal
A Performance-Enhanced Liquid Metal-Based Microheater with Parallel Ventilating Side-Channels
Previous Article in Special Issue
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment
Open AccessArticle

Design and Implementation of a GaN-Based Three-Phase Active Power Filter

Department of Electrical Engineering, CEECS, National United University, Miaoli 36063, Taiwan
Author to whom correspondence should be addressed.
Micromachines 2020, 11(2), 134;
Received: 25 December 2019 / Revised: 21 January 2020 / Accepted: 21 January 2020 / Published: 24 January 2020
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
Renewable energy (RE)-based power generation systems and modern manufacturing facilities utilize a wide variety of power converters based on high-frequency power electronic devices and complex switching technologies. This has resulted in a noticeable degradation in the power quality (PQ) of power systems. To solve the aforementioned problem, advanced active power filters (APFs) with improved system performance and properly designed switching devices and control algorithms can provide a promising solution because an APF can compensate for voltage sag, harmonic currents, current imbalance, and active and reactive powers individually or simultaneously. This paper demonstrates, for the first time, the detailed design procedure and performance of a digitally controlled 2 kVA three-phase shunt APF system using gallium nitride (GaN) high electron mobility transistors (HEMTs). The designed digital control scheme consists of three type II controllers with a digital signal processor (DSP) as the control core. Using the proposed APF and control algorithms, fast and accurate compensation for harmonics, imbalance, and reactive power is achieved in both simulation and hardware tests, demonstrating the feasibility and effectiveness of the proposed system. Moreover, GaN HEMTs allow the system to achieve up to 97.2% efficiency.
Keywords: gallium nitride (GaN); power switching device; active power filter (APF); power quality (PQ) gallium nitride (GaN); power switching device; active power filter (APF); power quality (PQ)
MDPI and ACS Style

Ma, C.-T.; Gu, Z.-H. Design and Implementation of a GaN-Based Three-Phase Active Power Filter. Micromachines 2020, 11, 134.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop