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Open AccessArticle

Improved DRUS 4H-SiC MESFET with High Power Added Efficiency

School of Microelectronics, Xidian University, Xi’an 710071, China
Author to whom correspondence should be addressed.
Micromachines 2020, 11(1), 35;
Received: 22 November 2019 / Revised: 19 December 2019 / Accepted: 25 December 2019 / Published: 27 December 2019
(This article belongs to the Special Issue Miniaturized Transistors, Volume II)
A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping under the lower gate of the channel, while optimizing the thickness of the undoped region. Compared with the double-recessed 4H-SiC MESFET with partly undoped space region (DRUS-MESFET), the power added efficiency of the LDUS-MESFET is increased by 85.8%, and the saturation current is increased by 27.4%. Although the breakdown voltage of the device has decreased, the decrease is within an acceptable range. Meanwhile, the LDUS-MESFET has a smaller gate-source capacitance and a large transconductance. Therefore, the LDUS-MESFET can better balance DC and AC characteristics and improve power added efficiency (PAE). View Full-Text
Keywords: 4H-SiC MESFET; simulation; power added efficiency (PAE) 4H-SiC MESFET; simulation; power added efficiency (PAE)
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MDPI and ACS Style

Jia, H.; Liang, Y.; Li, T.; Tong, Y.; Zhu, S.; Wang, X.; Zeng, T.; Yang, Y. Improved DRUS 4H-SiC MESFET with High Power Added Efficiency. Micromachines 2020, 11, 35.

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