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Journal: Micromachines, 2019
Volume: 10
Number: 555
Article:
An Improved 4H-SiC MESFET with a Partially Low Doped Channel
Authors:
by
Hujun Jia, Yibo Tong, Tao Li, Shunwei Zhu, Yuan Liang, Xingyu Wang, Tonghui Zeng and Yintang Yang
Link:
https://www.mdpi.com/2072-666X/10/9/555
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