Design and Fabrication of a Wavelength-Selective Near-Infrared Metasurface Emitter for a Thermophotovoltaic System
Niigata University, Niigata 950-2181, Japan
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Micromachines 2019, 10(2), 157; https://doi.org/10.3390/mi10020157
Received: 30 November 2018
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Revised: 20 February 2019
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Accepted: 22 February 2019
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Published: 25 February 2019
(This article belongs to the Special Issue Infrared Nanophotonics: Materials, Devices, and Applications)
In this study, a tungsten-SiO2-based metal–insulator–metal-structured metasurface for the thermal emitter of the thermophotovoltaic system was designed and fabricated. The proposed emitter was fabricated by applying the photolithography method. The fabricated emitter has high emissivity in the visible to near-infrared region and shows excellent wavelength selectivity. This spectral emissivity tendency agreed well with the result calculated by the finite-difference time-domain method. Additionally, the underlying mechanism of its emission was scrutinized. Study of the fabrication process and theoretical mechanisms of the emission, clarified in this research, will be fundamental to design the wavelength-selective thermal emitter.
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MDPI and ACS Style
Sakurai, A.; Matsuno, Y. Design and Fabrication of a Wavelength-Selective Near-Infrared Metasurface Emitter for a Thermophotovoltaic System. Micromachines 2019, 10, 157. https://doi.org/10.3390/mi10020157
AMA Style
Sakurai A, Matsuno Y. Design and Fabrication of a Wavelength-Selective Near-Infrared Metasurface Emitter for a Thermophotovoltaic System. Micromachines. 2019; 10(2):157. https://doi.org/10.3390/mi10020157
Chicago/Turabian StyleSakurai, Atsushi, and Yuki Matsuno. 2019. "Design and Fabrication of a Wavelength-Selective Near-Infrared Metasurface Emitter for a Thermophotovoltaic System" Micromachines 10, no. 2: 157. https://doi.org/10.3390/mi10020157
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