Next Article in Journal
Multi-Stage Particle Separation based on Microstructure Filtration and Dielectrophoresis
Next Article in Special Issue
The Effect of the Anisotropy of Single Crystal Silicon on the Frequency Split of Vibrating Ring Gyroscopes
Previous Article in Journal
Self-Cleaning: From Bio-Inspired Surface Modification to MEMS/Microfluidics System Integration
Previous Article in Special Issue
A Novel Fabricating Process of Catalytic Gas Sensor Based on Droplet Generating Technology
Article Menu
Issue 2 (February) cover image

Export Article

Open AccessArticle
Micromachines 2019, 10(2), 102; https://doi.org/10.3390/mi10020102

Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH

1
Institute of Chemistry, Technology and Metallurgy-Centre of Microelectronic Technologies (IHTM-CMT), University of Belgrade, Njegoševa 12, 11000 Belgrade, Serbia
2
Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
*
Author to whom correspondence should be addressed.
Received: 20 December 2018 / Revised: 18 January 2019 / Accepted: 26 January 2019 / Published: 31 January 2019
(This article belongs to the Special Issue MEMS/NEMS Sensors: Fabrication and Application)
Full-Text   |   PDF [2606 KB, uploaded 31 January 2019]   |  

Abstract

Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined <n10> crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated. View Full-Text
Keywords: tetramethylammonium hydroxide (TMAH); wet etching; silicon; 3D simulation; level-set method tetramethylammonium hydroxide (TMAH); wet etching; silicon; 3D simulation; level-set method
Figures

Graphical abstract

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Smiljanić, M.M.; Lazić, Ž.; Radjenović, B.; Radmilović-Radjenović, M.; Jović, V. Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. Micromachines 2019, 10, 102.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top