Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH
Abstract
:1. Introduction
2. Experimental Setup
3. Discussion and Results
3.1. Square Islands in the Masking Layer with Sides Along <n10> Crystallographic Directions
3.2. Square Apertures in the Masking Layer with Sides Along <n10> Crystallographic Cirections
3.3. Circle Island and Aperture in the Masking Layer
3.4. Etch Rates of Exposed Planes
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Plane {n11} | γn11 theo (°) | Etch Rate rn11 input (µm/min) | γn11 exp (°) | Etch Rate rn11 exp (µm/min) | γn11 sim (°) | Etch Rate rn11 sim (µm/min) |
---|---|---|---|---|---|---|
{111} | 54.7 | 0.02 | 54.2 | 0.02 | 54.7 | 0.03 |
{211} | 65.9 | 0.87 | 66.7 | 0.87 | 65.3 | 0.81 |
{311} | 72.5 | 0.93 | 74.2 | 0.93 | 69.8 | 0.88 |
{411} | 76.4 | 0.82 | 78.7 | 0.85 | 76.9 | 0.79 |
{511} | 78.9 | 0.75 | 80.9 | 0.81 | 79.4 | 0.74 |
{611} | 80.7 | 0.71 | 81 | 0.73 | 80.8 | 0.70 |
{711} | 82 | 0.67 | 83.1 | 0.69 | 82.1 | 0.66 |
{811} | 82.9 | 0.65 | 83.1 | 0.66 | 82.9 | 0.64 |
{911} | 83.7 | 0.63 | 84.1 | 0.63 | 83.8 | 0.62 |
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Smiljanić, M.M.; Lazić, Ž.; Radjenović, B.; Radmilović-Radjenović, M.; Jović, V. Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. Micromachines 2019, 10, 102. https://doi.org/10.3390/mi10020102
Smiljanić MM, Lazić Ž, Radjenović B, Radmilović-Radjenović M, Jović V. Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH. Micromachines. 2019; 10(2):102. https://doi.org/10.3390/mi10020102
Chicago/Turabian StyleSmiljanić, Milče M., Žarko Lazić, Branislav Radjenović, Marija Radmilović-Radjenović, and Vesna Jović. 2019. "Evolution of Si Crystallographic Planes-Etching of Square and Circle Patterns in 25 wt % TMAH" Micromachines 10, no. 2: 102. https://doi.org/10.3390/mi10020102