Next Article in Journal
Development and Optimization of an Airborne Formaldehyde Microfluidic Analytical Device Based on Passive Uptake through a Microporous Tube
Previous Article in Journal
Diversity of 2D Acoustofluidic Fields in an Ultrasonic Cavity Generated by Multiple Vibration Sources
Previous Article in Special Issue
Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology
Open AccessArticle

InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation

Air Force Research Laboratory, Sensors Directorate, Wright-Patterson Air Force Base, OH 45433, USA
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(12), 806; https://doi.org/10.3390/mi10120806
Received: 31 October 2019 / Revised: 17 November 2019 / Accepted: 19 November 2019 / Published: 22 November 2019
(This article belongs to the Special Issue Semiconductor Infrared Devices and Applications)
This paper reports an InAs/InAsSb strained-layer superlattice (SLS) mid-wavelength infrared detector and a focal plane array particularly suited for high-temperature operation. Utilizing the nBn architecture, the detector structure was grown by molecular beam epitaxy and consists of a 5.5 µm thick n-type SLS as the infrared-absorbing element. Through detailed characterization, it was found that the detector exhibits a cut-off wavelength of 5.5 um, a peak external quantum efficiency (without anti-reflection coating) of 56%, and a dark current of 3.4 × 10-4 A/cm2, which is a factor of 9 times Rule 07, at 160 K temperature. It was also found that the quantum efficiency increases with temperature and reaches ~56% at 140 K, which is probably due to the diffusion length being shorter than the absorber thickness at temperatures below 140 K. A 320 × 256 focal plane array was also fabricated and tested, revealing noise equivalent temperature difference of ~10 mK at 80 K with f/2.3 optics and 3 ms integration time. The overall performance indicates that these SLS detectors have the potential to reach the performance comparable to InSb detectors at temperatures higher than 80 K, enabling high-temperature operation.
Keywords: Infrared detector; strained layer superlattice; InAs/InAsSb; absorption coefficient; barrier detector; high operating temperature Infrared detector; strained layer superlattice; InAs/InAsSb; absorption coefficient; barrier detector; high operating temperature
MDPI and ACS Style

Ariyawansa, G.; Duran, J.; Reyner, C.; Scheihing, J. InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation. Micromachines 2019, 10, 806.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop