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Open AccessArticle

STED Direct Laser Writing of 45 nm Width Nanowire

by Xiaolong He 1,2, Tianlong Li 1,2,3, Jia Zhang 1,2 and Zhenlong Wang 1,2,*
1
Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150080, China
2
School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China
3
Institute of Pharmacy, Sechenov University, 119991 Moscow, Russia
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(11), 726; https://doi.org/10.3390/mi10110726
Received: 20 September 2019 / Revised: 22 October 2019 / Accepted: 26 October 2019 / Published: 28 October 2019
(This article belongs to the Special Issue Femtosecond Laser Micromachining for Photonics Applications)
Controlled fabrication of 45 nm width nanowire using simulated emission depletion (STED) direct laser writing with a rod-shape effective focus spot is presented. In conventional STED direct laser writing, normally a donut-shaped depletion focus is used, and the minimum linewidth is restricted to 55 nm. In this work, we push this limit to sub-50 nm dimension with a rod-shape effective focus spot, which is the combination of a Gaussian excitation focus and twin-oval depletion focus. Effects of photoinitiator type, excitation laser power, and depletion laser power on the width of the nanowire are explored, respectively. Single nanowire with 45 nm width is obtained, which is λ/18 of excitation wavelength and the minimum linewidth in pentaerythritol triacrylate (PETA) photoresist. Our result accelerates the progress of achievable linewidth reduction in STED direct laser writing. View Full-Text
Keywords: controlled fabrication; 45 nm width; STED direct laser writing; rod-shape effective focus controlled fabrication; 45 nm width; STED direct laser writing; rod-shape effective focus
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MDPI and ACS Style

He, X.; Li, T.; Zhang, J.; Wang, Z. STED Direct Laser Writing of 45 nm Width Nanowire. Micromachines 2019, 10, 726.

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