Next Article in Journal
Squeezing Dynamic Mechanism of High-Viscosity Droplet and its Application for Adhesive Dispensing in Sub-Nanoliter Resolution
Previous Article in Journal
STED Direct Laser Writing of 45 nm Width Nanowire
Previous Article in Special Issue
One-Step Coating Processed Phototransistors Enabled by Phase Separation of Semiconductor and Dielectric Blend Film
Open AccessArticle

Solvent-Dependent Electrical Characteristics and Mechanical Stability of Flexible Organic Ferroelectric Field-Effect Transistors

1
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
2
Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea
3
College of Ocean Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China
*
Authors to whom correspondence should be addressed.
Micromachines 2019, 10(11), 727; https://doi.org/10.3390/mi10110727
Received: 30 September 2019 / Revised: 20 October 2019 / Accepted: 25 October 2019 / Published: 28 October 2019
(This article belongs to the Special Issue Organic Electronic Devices)
Flexible organic ferroelectric field-effect transistors (Fe-FETs) have attracted attention for next-generation memory applications. A fundamental understanding of the electrical properties and mechanical stability of transistors is a prerequisite to realizing practical flexible electronics. Here, we demonstrate the solvent-dependent electrical characteristics and mechanical stability of flexible Fe-FETs. Poly(vinylidene fluoride-trifluoro-ethylene) (P(VDF-TrFE)) based Fe-FETs were fabricated by using dimethylformamide (DMF) and methyl ethyl ketone (MEK) solvents on a polyimide substrate. P(VDF-TrFE) from DMF formed a smoother surface than a surface from MEK; the surface property greatly affected the electrical properties and mechanical stability of the devices. Larger hysteresis and higher mobility were obtained from Fe-FET using DMF compared to those characteristics from using MEK. Furthermore, Fe-FET using DMF showed lower degradation of on-current and mobility under repetitive mechanical stress than an MEK-based Fe-FET, due to its excellent semiconductor-insulator interface. These results will guide appropriate solvent selection and contribute to the improvement of flexible Fe-FET electrical properties and mechanical stability in the next generation of memory devices. View Full-Text
Keywords: flexible electronics; ferroelectric field-effect transistor; mechanical stability; solvent flexible electronics; ferroelectric field-effect transistor; mechanical stability; solvent
Show Figures

Figure 1

MDPI and ACS Style

Kim, D.-K.; Lee, H.; Zhang, X.; Bae, J.-H.; Park, J. Solvent-Dependent Electrical Characteristics and Mechanical Stability of Flexible Organic Ferroelectric Field-Effect Transistors. Micromachines 2019, 10, 727.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop