Next Article in Journal
Photo-Electrochemical Treatment of Reactive Dyes in Wastewater and Reuse of the Effluent: Method Optimization
Next Article in Special Issue
Engineering Properties and Correlation Analysis of Fiber Cementitious Materials
Previous Article in Journal
Development of Self-Healing Coatings Based on Linseed Oil as Autonomous Repairing Agent for Corrosion Resistance
Open AccessArticle

Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

Department of Electronic Engineering, Ming Chuan University, 5 De-Ming Rd., Gui-Shan, Taoyuan 33348, Taiwan
Materials 2014, 7(11), 7339-7348; https://doi.org/10.3390/ma7117339
Received: 21 August 2014 / Revised: 23 October 2014 / Accepted: 7 November 2014 / Published: 12 November 2014
(This article belongs to the Special Issue Selected Papers from ICETI2014)
In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV and the average value of transmittance of ZnO:B films was about 91% in the visible light region. Experimental results indicated that the resistance switching in the W/ZnO:B/W structure is nonpolar. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) is about of the order of 105 at room temperature. According to the temperature dependence of current-voltage characteristics, the conduction mechanism in ZnO:B films is dominated by hopping conduction and Ohmic conduction in HRS and LRS, respectively. Therefore, trap spacing (1.2 nm) and trap energy levels in ZnO:B films could be obtained. View Full-Text
Keywords: boron doped zinc oxide; resistance switching; conduction mechanism; trap spacing; trap energy level boron doped zinc oxide; resistance switching; conduction mechanism; trap spacing; trap energy level
Show Figures

Figure 1

MDPI and ACS Style

Chiu, F.-C. Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films. Materials 2014, 7, 7339-7348.

Show more citation formats Show less citations formats

Article Access Map by Country/Region

1
Only visits after 24 November 2015 are recorded.
Back to TopTop