Next Article in Journal
Magnetic Resonance Characterization of Porous Media Using Diffusion through Internal Magnetic Fields
Next Article in Special Issue
Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate
Previous Article in Journal
Chemical Bonding of AlH3 Hydride by Al-L2,3 Electron Energy-Loss Spectra and First-Principles Calculations
Previous Article in Special Issue
Study of Direct-Contact HfO2/Si Interfaces
Article Menu

Export Article

Open AccessArticle
Materials 2012, 5(4), 575-589;

Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications

Oerlikon USA, Inc., Business Unit Systems, 970 Carillon Dr., Suite 300, St. Petersburg, FL 33716, USA
OC Oerlikon Balzers AG, Business Unit Systems, Iramali 18, P.O. Box 1000, LI-9496 Balzers, Liechtenstein
Author to whom correspondence should be addressed.
Received: 3 March 2012 / Revised: 26 March 2012 / Accepted: 28 March 2012 / Published: 10 April 2012
(This article belongs to the Special Issue High-k Materials and Devices)
PDF [2004 KB, uploaded 10 April 2012]


New apparatus and a new process for the sputter deposition of modified barium titanate thin-films were developed. Films were deposited at temperatures up to 900 °C from a Ba0.96Ca0.04Ti0.82Zr0.18O3 (BCZTO) target directly onto Si, Ni and Pt surfaces and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Film texture and crystallinity were found to depend on both deposition temperature and substrate: above 600 °C, the as-deposited films consisted of well-facetted crystallites with the cubic perovskite structure. A strongly textured Pt (111) underlayer enhanced the (001) orientation of BCZTO films deposited at 900 °C, 10 mtorr pressure and 10% oxygen in argon. Similar films deposited onto a Pt (111) textured film at 700 °C and directly onto (100) Si wafers showed relatively larger (011) and diminished intensity (00ℓ) diffraction peaks. Sputter ambients containing oxygen caused the Ni underlayers to oxidize even at 700 °C: Raising the process temperature produced more diffraction peaks of NiO with increased intensities. Thin-film capacitors were fabricated using ~500 nm thick BCZTO dielectrics and both Pt and Ni top and bottom electrodes. Small signal capacitance measurements were carried out to determine capacitance and parallel resistance at low frequencies and from these data, the relative permittivity (er) and resistivity (r) of the dielectric films were calculated; values ranged from ~50 to >2,000, and from ~104 to ~1010 Ω∙cm, respectively. View Full-Text
Keywords: RF sputtering; barium titanate; high-k RF sputtering; barium titanate; high-k

Figure 1

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

MDPI and ACS Style

Reynolds, G.J.; Kratzer, M.; Dubs, M.; Felzer, H.; Mamazza, R. Sputtered Modified Barium Titanate for Thin-Film Capacitor Applications. Materials 2012, 5, 575-589.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top